 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE196 (NPN) & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current-Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Symbol Test Conditions Min 70 - - - - Typ Max Unit - - - - - - 1.0 100 2.0 1.0 V mA A mA mA Collector-Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 Collector Cutoff Current ICEO ICEX Emitter Cutoff Current IEBO VCE = 60V, IB = 0 VCE = 80V, VEB(off) = 1.5V VCE = 80V, VEB(off) = 1.5V, TC = +150C VBE = 5V, IC = 0 Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) Symbol hFE VCE(sat) VBE(on) fT Test Conditions IC = 2A, VCE = 4V IC = 7A, VCE = 4V IC = 7A, IB = 3A IC = 7A, VCE = 4V Min 30 2.3 - - Typ Max Unit - - - - 150 - 3.5 3.0 V V DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Current-Gain Bandwidth Product NTE196 NTE197 Output Capacitance Small-Signal Current Gain IC = 500mA, VCE = 4V, ftest = 1MHz, Note 2 Cob hfe VCB = 10V, IE = 0, f = 1MHz IC = 500mA, VCE = 4V, f = 50kHz 4 10 - 20 - - - - - - 250 - MHz MHz pF Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. fT = |hfe| ftest .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
Price & Availability of NTE196
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |